NickelMaghrebV1, Main, Exploration, bibRecord, 000104

Ni/SiC-6H Schottky Barrier Diode interfacial states characterization related to temperature

Identifieur interne : 000104 ( Main/Exploration ); précédent : 000103; suivant : 000105

Ni/SiC-6H Schottky Barrier Diode interfacial states characterization related to temperature

Auteurs : Mekki Benamara [Algérie] ; Macho Anani [Algérie] ; Boudali Akkal [Algérie] ; Zineb Benamara [Algérie]

Source :

Journal of alloys and compounds [ 0925-8388 ] ; 2014.

RBID : Pascal:14-0242700

Descripteurs français

Pascal (Inist)
- Barrière Schottky, Structure électronique, Effet tunnel, Energie activation, Nickel, Carbure de silicium, Contact métal semiconducteur, SiC.
Wicri :
- topic : Nickel.

English descriptors

KwdEn :
- Activation energy, Electronic structure, Metal-semiconductor contacts, Nickel, Schottky barriers, Silicon carbide, Tunnel effect.

Abstract

This study presents a Ni/SiC-6H Schottky Barrier Diode (SBD) characterization at different temperatures going from 77 K to 450 K. The electronic properties of this diode were reported by the analysis of its C(V_G) and I(V_G) characteristics as a function of temperature. At low temperature when T < 100 K the high part ideality factors n^H were close to 2 showing that the conduction is dominated by the generation-recombination at deep centers. Also, the values of low part ideality factor n^L varied from 2.69 down to 1.89. These values were also much closer to 2, showing that the conduction mechanism was then dominated by a tunneling current assisted by default. The mean interfacial states density D_s(mean) decreased with increasing temperature from 1.2 × 10¹³ eV^-1 cm^-2 to 6.3 × 10¹² eV^-1 cm^-2. This reducing appeared to be due to the restructuring and rearrangement which occurs under molecules thermal activation within the Ni/SiC-6H metal/semiconductor interface.

Affiliations:

Algérie

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ni/SiC-6H Schottky Barrier Diode interfacial states characterization related to temperature</title>
<author><name sortKey="Benamara, Mekki" sort="Benamara, Mekki" uniqKey="Benamara M" first="Mekki" last="Benamara">Mekki Benamara</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Applied Microelectronics Laboratory (AMEL), Electronics Department. Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89</s1>
<s2>22000 Sidi Bel Abbes</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>22000 Sidi Bel Abbes</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Anani, Macho" sort="Anani, Macho" uniqKey="Anani M" first="Macho" last="Anani">Macho Anani</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire des Réseaux de Communications, d'Architecture et de Multimedia, Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89</s1>
<s2>22000 Sidi Bel Abbes</s2>
<s3>DZA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>22000 Sidi Bel Abbes</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Akkal, Boudali" sort="Akkal, Boudali" uniqKey="Akkal B" first="Boudali" last="Akkal">Boudali Akkal</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Applied Microelectronics Laboratory (AMEL), Electronics Department. Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89</s1>
<s2>22000 Sidi Bel Abbes</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>22000 Sidi Bel Abbes</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Benamara, Zineb" sort="Benamara, Zineb" uniqKey="Benamara Z" first="Zineb" last="Benamara">Zineb Benamara</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Applied Microelectronics Laboratory (AMEL), Electronics Department. Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89</s1>
<s2>22000 Sidi Bel Abbes</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>22000 Sidi Bel Abbes</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">INIST</idno>
<idno type="inist">14-0242700</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0242700 INIST</idno>
<idno type="RBID">Pascal:14-0242700</idno>
<idno type="wicri:Area/PascalFrancis/Corpus">000012</idno>
<idno type="wicri:Area/PascalFrancis/Curation">000429</idno>
<idno type="wicri:Area/PascalFrancis/Checkpoint">000018</idno>
<idno type="wicri:explorRef" wicri:stream="PascalFrancis" wicri:step="Checkpoint">000018</idno>
<idno type="wicri:doubleKey">0925-8388:2014:Benamara M:ni:sic:h</idno>
<idno type="wicri:Area/Main/Merge">000105</idno>
<idno type="wicri:Area/Main/Curation">000104</idno>
<idno type="wicri:Area/Main/Exploration">000104</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Ni/SiC-6H Schottky Barrier Diode interfacial states characterization related to temperature</title>
<author><name sortKey="Benamara, Mekki" sort="Benamara, Mekki" uniqKey="Benamara M" first="Mekki" last="Benamara">Mekki Benamara</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Applied Microelectronics Laboratory (AMEL), Electronics Department. Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89</s1>
<s2>22000 Sidi Bel Abbes</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>22000 Sidi Bel Abbes</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Anani, Macho" sort="Anani, Macho" uniqKey="Anani M" first="Macho" last="Anani">Macho Anani</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire des Réseaux de Communications, d'Architecture et de Multimedia, Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89</s1>
<s2>22000 Sidi Bel Abbes</s2>
<s3>DZA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>22000 Sidi Bel Abbes</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Akkal, Boudali" sort="Akkal, Boudali" uniqKey="Akkal B" first="Boudali" last="Akkal">Boudali Akkal</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Applied Microelectronics Laboratory (AMEL), Electronics Department. Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89</s1>
<s2>22000 Sidi Bel Abbes</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>22000 Sidi Bel Abbes</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Benamara, Zineb" sort="Benamara, Zineb" uniqKey="Benamara Z" first="Zineb" last="Benamara">Zineb Benamara</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Applied Microelectronics Laboratory (AMEL), Electronics Department. Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89</s1>
<s2>22000 Sidi Bel Abbes</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>22000 Sidi Bel Abbes</wicri:noRegion>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Journal of alloys and compounds</title>
<title level="j" type="abbreviated">J. alloys compd.</title>
<idno type="ISSN">0925-8388</idno>
<imprint><date when="2014">2014</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Journal of alloys and compounds</title>
<title level="j" type="abbreviated">J. alloys compd.</title>
<idno type="ISSN">0925-8388</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term>
<term>Electronic structure</term>
<term>Metal-semiconductor contacts</term>
<term>Nickel</term>
<term>Schottky barriers</term>
<term>Silicon carbide</term>
<term>Tunnel effect</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Barrière Schottky</term>
<term>Structure électronique</term>
<term>Effet tunnel</term>
<term>Energie activation</term>
<term>Nickel</term>
<term>Carbure de silicium</term>
<term>Contact métal semiconducteur</term>
<term>SiC</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Nickel</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">This study presents a Ni/SiC-6H Schottky Barrier Diode (SBD) characterization at different temperatures going from 77 K to 450 K. The electronic properties of this diode were reported by the analysis of its C(V<sub>G</sub>
) and I(V<sub>G</sub>
) characteristics as a function of temperature. At low temperature when T < 100 K the high part ideality factors n<sup>H</sup>
 were close to 2 showing that the conduction is dominated by the generation-recombination at deep centers. Also, the values of low part ideality factor n<sup>L</sup>
 varied from 2.69 down to 1.89. These values were also much closer to 2, showing that the conduction mechanism was then dominated by a tunneling current assisted by default. The mean interfacial states density D<sub>s(mean)</sub>
 decreased with increasing temperature from 1.2 × 10<sup>13</sup>
 eV<sup>-1</sup>
 cm<sup>-2</sup>
 to 6.3 × 10<sup>12</sup>
 eV<sup>-1</sup>
 cm<sup>-2</sup>
. This reducing appeared to be due to the restructuring and rearrangement which occurs under molecules thermal activation within the Ni/SiC-6H metal/semiconductor interface.</div>
</front>
</TEI>
<affiliations><list><country><li>Algérie</li>
</country>
</list>
<tree><country name="Algérie"><noRegion><name sortKey="Benamara, Mekki" sort="Benamara, Mekki" uniqKey="Benamara M" first="Mekki" last="Benamara">Mekki Benamara</name>
</noRegion>
<name sortKey="Akkal, Boudali" sort="Akkal, Boudali" uniqKey="Akkal B" first="Boudali" last="Akkal">Boudali Akkal</name>
<name sortKey="Anani, Macho" sort="Anani, Macho" uniqKey="Anani M" first="Macho" last="Anani">Macho Anani</name>
<name sortKey="Benamara, Zineb" sort="Benamara, Zineb" uniqKey="Benamara Z" first="Zineb" last="Benamara">Zineb Benamara</name>
</country>
</tree>
</affiliations>
</record>

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Ni/SiC-6H Schottky Barrier Diode interfacial states characterization related to temperature

Ni/SiC-6H Schottky Barrier Diode interfacial states characterization related to temperature

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri